Title :
Characterization of GaAs devices by a versatile pulsed I-V measurement system
Author :
Platzker, A. ; Palevsky, A. ; Nash, S. ; Struble, W. ; Tajima, Y.
Author_Institution :
Raytheon Res. Div., Lexington, MA, USA
Abstract :
The authors build and utilized a pulsed I-V system which is capable of reaching any current-voltage point of three-terminal devices from any arbitrarily chosen DC bias point. The system, which can be used on wafer, serves as an invaluable tool for device modeling and process diagnostics. Direct dependence of the pulsed I-V curves on the DC bias was found in GaAs MESFETs and HEMTs (high-electron mobility transistors).<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; characteristics measurement; gallium arsenide; high electron mobility transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; DC bias point; GaAs devices; HEMTs; MESFETs; device modeling; high-electron mobility transistors; microwave transistors; process diagnostics; pulsed I-V measurement system; three-terminal devices; Breakdown voltage; Current measurement; FETs; Frequency measurement; Gallium arsenide; HEMTs; MESFETs; MODFETs; Pulse measurements; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99780
