DocumentCode :
2450654
Title :
The state of the art in interconnect simulation
Author :
Sabelka, R. ; Harlander, C. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
fYear :
2000
fDate :
2000
Firstpage :
6
Lastpage :
11
Abstract :
Until recently, most interconnect models took into account capacitances and resistances only. With operating frequencies in the GHz regime, the effect of the magnetic field can no longer be neglected. Inductances, skin effect, and transmission line behavior must be considered carefully. For many complicated topographies, where lumped or one-dimensional distributed models do not reach the required accuracy, three dimensional quasi-static or even full-wave models are required. Since the amount of power dissipated in the interconnect structures is increasing, thermal interconnect modeling is also gaining importance, especially for silicon-on-insulator chips and low k materials. We demonstrate how simulation tools are keeping pace with these demands
Keywords :
capacitance; circuit simulation; dielectric thin films; electric resistance; inductance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; lumped parameter networks; permittivity; skin effect; software tools; surface topography; thermal analysis; transmission line theory; 1D distributed models; 3D quasi-static models; capacitance; full-wave models; inductance; interconnect models; interconnect simulation; interconnect structures; interconnect topographies; low k materials; lumped models; magnetic field effects; operating frequencies; power dissipation; resistance; silicon-on-insulator chips; simulation tools; skin effect; thermal interconnect modeling; transmission line behavior; Capacitors; Circuit simulation; Clocks; Delay effects; Frequency; Inductance; Integrated circuit interconnections; Power system interconnection; Power system modeling; Power transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
Type :
conf
DOI :
10.1109/SISPAD.2000.871194
Filename :
871194
Link To Document :
بازگشت