Title :
High power electronics device IGCTs in high voltage inverter
Author :
Yu, Qingguang ; Liu, Wenhua ; Song, Qiang
Author_Institution :
Tsinghua Univ., Beijing, China
Abstract :
Application of IGCTs (integrated gate commutated thyristors) in series in high voltage three level VSI (voltage source inverter) is discussed in this paper. Characteristics of IGCTs in series and generation of IGCT gate circuit is also described. Finally, output waveform of the designed VSI drive system are put forward.
Keywords :
MOS-controlled thyristors; electric drives; invertors; 1400 kW; 6 kV; IGCT gate circuit; VSI drive; high power electronics device IGCT; high voltage inverter; high voltage three level VSI; integrated gate commutated thyristors; voltage source inverter; Cathodes; Circuits; Feedback; IEEE members; Inverters; Passive optical networks; Pulse generation; Pulsed power supplies; Thyristors; Voltage;
Conference_Titel :
Power System Technology, 2002. Proceedings. PowerCon 2002. International Conference on
Print_ISBN :
0-7803-7459-2
DOI :
10.1109/ICPST.2002.1047551
