DocumentCode
2450668
Title
High power electronics device IGCTs in high voltage inverter
Author
Yu, Qingguang ; Liu, Wenhua ; Song, Qiang
Author_Institution
Tsinghua Univ., Beijing, China
Volume
2
fYear
2002
fDate
2002
Firstpage
1008
Abstract
Application of IGCTs (integrated gate commutated thyristors) in series in high voltage three level VSI (voltage source inverter) is discussed in this paper. Characteristics of IGCTs in series and generation of IGCT gate circuit is also described. Finally, output waveform of the designed VSI drive system are put forward.
Keywords
MOS-controlled thyristors; electric drives; invertors; 1400 kW; 6 kV; IGCT gate circuit; VSI drive; high power electronics device IGCT; high voltage inverter; high voltage three level VSI; integrated gate commutated thyristors; voltage source inverter; Cathodes; Circuits; Feedback; IEEE members; Inverters; Passive optical networks; Pulse generation; Pulsed power supplies; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power System Technology, 2002. Proceedings. PowerCon 2002. International Conference on
Print_ISBN
0-7803-7459-2
Type
conf
DOI
10.1109/ICPST.2002.1047551
Filename
1047551
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