DocumentCode
2450766
Title
A fast three-dimensional MC simulator for tunneling diodes
Author
Wagner, Mathias ; Mizuta, Hiroshi ; Nakazato, Kazuo
Author_Institution
Hitachi Cambridge Lab., Hitachi Europe Ltd., Cambridge, UK
fYear
2000
fDate
2000
Firstpage
31
Lastpage
33
Abstract
A fast simulator is presented for 3D vertical tunneling devices with lateral confinement and gates. The tunneling current across each barrier is calculated using a combination of 3D ray tracing, Monte Carlo ensemble averaging, and a multi-grid Poisson solver, until self-consistency of the current is achieved
Keywords
Monte Carlo methods; Poisson equation; electric current; ray tracing; semiconductor device models; tunnel diodes; 3D MC simulator; 3D ray tracing; 3D vertical tunneling devices; Monte Carlo ensemble averaging; barrier tunneling current; current self-consistency; lateral confinement; lateral gates; multi-grid Poisson solver; tunneling diodes; Current measurement; Diodes; Electrostatic measurements; Intrusion detection; Position measurement; Probability; Sampling methods; Temperature; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871199
Filename
871199
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