DocumentCode
2450850
Title
A Monte Carlo technique to investigate signal delays of advanced Si BJT´s up to high currents
Author
Palestri, Pierpaolo ; Selmi, Luca ; Hurkx, Fred ; Slotboom, J.
Author_Institution
DIEGM, Udine, Italy
fYear
2000
fDate
2000
Firstpage
46
Lastpage
49
Abstract
We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring relevant nonlocal effects. The method is suited to analyze base and collector signal delays in presence of significant nonequilibrium transport effects and up to high currents, and to verify the physical meaning and applicability of delay expressions for compact models
Keywords
Monte Carlo methods; bipolar transistors; delays; elemental semiconductors; semiconductor device models; silicon; Monte Carlo technique; Si; Si BJTs; base signal delays; collector signal delays; compact models; currents; nonequilibrium transport effects; nonlocal effects; signal delays; Computational modeling; Current density; Delay effects; Equations; Flowcharts; Laboratories; Monte Carlo methods; Signal analysis; Steady-state; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871203
Filename
871203
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