IGCTs: High-Power Technology for power electronics applications

Author

Nistor, I. ; Wikström, T. ; Scheinert, M.

Author_Institution

Corp. Res., ABB Switzerland Ltd., Dattwil, Switzerland

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

65

Lastpage

73

Abstract

This paper focuses on the most recent technical developments in integrated gate commutated thyristors. Improved safe operating area (SOA) of a new IGCT chip set based on ABB´s high power technology (HPT) platform with a rated voltage of 10 kV is presented. A matching 10 kV freewheeling diode is also reported. Combined, these developments open the door to new applications of silicon IGCTs reaching voltage levels of 7.2 kV RMS or more.

Keywords

power electronics; ABB high power technology; freewheeling diode; high-power technology; integrated gate commutated thyristors; power electronics applications; safe operating area; voltage 10 kV; voltage 7.2 kV; Circuits; Inductance; MOSFETs; Medium voltage; Paper technology; Power electronics; Power semiconductor switches; Semiconductor optical amplifiers; Silicon; Thyristors; FACTS; Integrated gate controlled thyristor; hybrid circuit breaker; medium voltage drive; power semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336607

Filename

5336607