Title :
2-D quantum transport device modeling by self-consistent solution of the Wigner and Poisson equations
Author :
Han, Zhiyi ; Goldsman, Neil ; Lin, Chung-Kai
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A new approach for simulating quantum transport in nanoscale semiconductor devices is presented. The method is based on the self-consistent solution of the Poisson and Wigner equations within a device. The spherical harmonic approach is used to transform the Wigner equation into a tractable expression. The results provide the distribution function and its averages throughout the device. The method has been applied to a MOSFET and a BJT. Inclusion of quantum effects reduces carrier concentrations near potential energy barriers, leading to reduced terminal current
Keywords :
MOSFET; Poisson equation; bipolar transistors; carrier density; electric current; harmonic analysis; nanotechnology; quantum interference phenomena; semiconductor device models; 2D quantum transport device modeling; BJT; MOSFET; Poisson equation; Wigner equation; carrier concentration; distribution function; distribution function device averages; nanoscale semiconductor devices; potential energy barriers; quantum effects; quantum transport simulation; self-consistent solution; spherical harmonic approach; terminal current; Acoustic scattering; Distribution functions; Integral equations; MOSFET circuits; Nanoscale devices; Optical scattering; Particle scattering; Poisson equations; Potential energy; Semiconductor devices;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871207
