Title :
Generation activity and crystal defects in semiconductor devices
Author :
Rybchenkov, A.A. ; Davydov, V.N.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectronics, Russia
Abstract :
The results of the generation time of nonequilibrium charge-carriers in Si/SiO2 structures, possessing anomalous generation-recombination (GR) activity are presented and the effects of the heterogeneous distribution of charge-carriers on lattice defects discussed
Keywords :
MIS structures; carrier lifetime; silicon; silicon compounds; stacking faults; Si-SiO2; Si/SiO2 structures; charge-carrier distribution; crystal defects; generation-recombination activity; nonequilibrium charge-carrier generation; semiconductor devices; Aluminum; Control systems; Current measurement; Etching; Oxidation; Probes; Radio control; Semiconductor devices; Silicon; Time measurement;
Conference_Titel :
Electron Devices and Materials, 2002. SIBEDEM 2002. The IEEE-Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7274-3
DOI :
10.1109/SIBEDM.2002.998046
