• DocumentCode
    2450969
  • Title

    Generation activity and crystal defects in semiconductor devices

  • Author

    Rybchenkov, A.A. ; Davydov, V.N.

  • Author_Institution
    Tomsk State Univ. of Control Syst. & Radioelectronics, Russia
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    9
  • Lastpage
    12
  • Abstract
    The results of the generation time of nonequilibrium charge-carriers in Si/SiO2 structures, possessing anomalous generation-recombination (GR) activity are presented and the effects of the heterogeneous distribution of charge-carriers on lattice defects discussed
  • Keywords
    MIS structures; carrier lifetime; silicon; silicon compounds; stacking faults; Si-SiO2; Si/SiO2 structures; charge-carrier distribution; crystal defects; generation-recombination activity; nonequilibrium charge-carrier generation; semiconductor devices; Aluminum; Control systems; Current measurement; Etching; Oxidation; Probes; Radio control; Semiconductor devices; Silicon; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2002. SIBEDEM 2002. The IEEE-Siberian Conference on
  • Conference_Location
    Tomsk
  • Print_ISBN
    0-7803-7274-3
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2002.998046
  • Filename
    998046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2450969