• DocumentCode
    2451066
  • Title

    Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

  • Author

    Charlet, F. ; Bermond, C. ; Putot, S. ; Le Carval, G. ; Flechet, B.

  • Author_Institution
    Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    We present a new simulation method for a fast and efficient extraction of frequency dependent R,L,C,G parameters in 2D transmission line structures embedded in a multilayered dielectric environment. Our method is based on two variational finite element formulations and use very efficient numerical tools (fictitious domain approach (Putot et al., 1999), fast solver, domain decomposition). It needs only an unstructured mesh of the conductor boundaries and is very memory and CPU time efficient. The results are validated on test structures with an original method of measurements and characterization
  • Keywords
    capacitance; circuit simulation; dielectric thin films; electric resistance; finite element analysis; inductance; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; losses; parameter estimation; transmission line theory; 2D transmission line structures; CPU time efficient method; R/L/C/G interconnect parameter extraction; characterization; domain decomposition; efficient numerical tools; fast solver; fictitious domain approach; measurements; memory efficient method; multilayered dielectric environment; test structures; unstructured conductor boundary mesh; variational finite element formulations; Admittance; Conductors; Electric potential; Equations; Finite element methods; Integrated circuit interconnections; Linear systems; Matrix decomposition; Transmission line matrix methods; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-6279-9
  • Type

    conf

  • DOI
    10.1109/SISPAD.2000.871214
  • Filename
    871214