Title :
Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools
Author :
Charlet, F. ; Bermond, C. ; Putot, S. ; Le Carval, G. ; Flechet, B.
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
We present a new simulation method for a fast and efficient extraction of frequency dependent R,L,C,G parameters in 2D transmission line structures embedded in a multilayered dielectric environment. Our method is based on two variational finite element formulations and use very efficient numerical tools (fictitious domain approach (Putot et al., 1999), fast solver, domain decomposition). It needs only an unstructured mesh of the conductor boundaries and is very memory and CPU time efficient. The results are validated on test structures with an original method of measurements and characterization
Keywords :
capacitance; circuit simulation; dielectric thin films; electric resistance; finite element analysis; inductance; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; losses; parameter estimation; transmission line theory; 2D transmission line structures; CPU time efficient method; R/L/C/G interconnect parameter extraction; characterization; domain decomposition; efficient numerical tools; fast solver; fictitious domain approach; measurements; memory efficient method; multilayered dielectric environment; test structures; unstructured conductor boundary mesh; variational finite element formulations; Admittance; Conductors; Electric potential; Equations; Finite element methods; Integrated circuit interconnections; Linear systems; Matrix decomposition; Transmission line matrix methods; Transmission lines;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871214
