Title :
3D-simulation of impact ionization in short microplasma
Author :
Baranouski, A.K. ; Apanasovich, V.V.
Author_Institution :
Byelorussian State Univ., Minsk, Belarus
Abstract :
The top requirements for modern semiconductor electronics are high integration and operating speed. Therefore the width of the multiplying region becomes very short in photodiodes and other avalanche devices operating at high reverse bias voltages. The developed model is object-oriented software for 3D-simulation. Every movable particle is a independent object which may be created as a result of one physical effect and destroyed as a result of some others. The simulation contains two ways of modeling. The first is behavior of particles according to the specified laws, and the second is probabilistic modeling of significant events during the particle movement. Our model depicts the impact ionization in a short microplasma. Microplasma is a short-time current through the local small inhomogeneous region of a p-n-junction with lower breakdown voltage. Therefore we analyzed the causes of current instability by simulation of avalanche multiplying
Keywords :
avalanche breakdown; impact ionisation; p-n junctions; semiconductor device models; semiconductor plasma; avalanche devices; avalanche multiplying; current instability; high reverse bias; impact ionization; lower breakdown voltage; particle movement; photodiodes; probabilistic modeling; short microplasma; Analytical models; Charge carriers; Electron devices; Electrostatics; Impact ionization; Object oriented modeling; Particle scattering; Scattering parameters; Space charge; Switches;
Conference_Titel :
Electron Devices and Materials, 2002. SIBEDEM 2002. The IEEE-Siberian Conference on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7274-3
DOI :
10.1109/SIBEDM.2002.998058
