Title :
Control of spatial distribution of As clusters in LT GaAs by indium delta doping
Author :
Chaldyshev, V.V. ; Bert, N.A. ; Faleev, N.N. ; Kunitsyn, A.E. ; Tret´yakov, V.V. ; Preobrazhenskii, V.V. ; Putyato, M.A. ; Semyagin, B.R.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
29 Apr-3 May 1996
Abstract :
Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200°C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The most appropriate conditions for thin and flat cluster sheets have been found and discussed
Keywords :
III-V semiconductors; gallium arsenide; impurity distribution; indium; molecular beam epitaxial growth; precipitation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 200 C; As clusters; GaAs:In; control spatial distribution; delta doping; molecular beam epitaxy; spatial distribution; two-dimensional precipitation; Annealing; Electrons; Gallium arsenide; Impurities; Indium; Molecular beam epitaxial growth; Semiconductor device doping; Semiconductor films; Sheet materials; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570871
