Control of spatial distribution of As clusters in LT GaAs by indium delta doping

Author

Chaldyshev, V.V. ; Bert, N.A. ; Faleev, N.N. ; Kunitsyn, A.E. ; Tret´yakov, V.V. ; Preobrazhenskii, V.V. ; Putyato, M.A. ; Semyagin, B.R.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

31

Lastpage

36

Abstract

Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200°C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The most appropriate conditions for thin and flat cluster sheets have been found and discussed

Keywords

III-V semiconductors; gallium arsenide; impurity distribution; indium; molecular beam epitaxial growth; precipitation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 200 C; As clusters; GaAs:In; control spatial distribution; delta doping; molecular beam epitaxy; spatial distribution; two-dimensional precipitation; Annealing; Electrons; Gallium arsenide; Impurities; Indium; Molecular beam epitaxial growth; Semiconductor device doping; Semiconductor films; Sheet materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570871

Filename

570871