Title :
Circuit simulation models for coming MOSFET generations
Author :
Miura-Mattausch, Mitiko ; Ooshiro, Seiwa ; Suetake, Masami
Author_Institution :
Dept. of Electr. Eng., Hiroshima Univ., Japan
Abstract :
The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed
Keywords :
MOSFET; circuit simulation; integrated circuit modelling; semiconductor device models; MOSFET; MOSFET modeling; MOSFET models; circuit simulation; circuit simulation models; model adaptation; physical phenomena; simulation accuracy; Analytical models; Capacitance; Circuit simulation; Equivalent circuits; Fabrication; MOSFET circuits; Predictive models; SPICE; Transistors; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871219
