Broadband, low-noise, cryogenically-coolable amplifiers in 1 to 40 GHz range

Author

Pospieszalski, M.W. ; Gallego, J.D. ; Lakatosh, W.J.

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

1253

Abstract

A design technique for very broadband, low-noise amplifiers is described. It is based on a wideband noise model of a MODFET. The computer-aided design and realization of L-, K-, and K??-band and wideband 8-18-GHz cryogenically coolable amplifiers with optimal noise performance are described. The uniqueness of the results presented rests in the demonstration that a single frequency measurement of noise parameters provides sufficient information for the design of a number of wideband amplifiers in the 1-40-GHz range.

Keywords

circuit CAD; electric noise measurement; high electron mobility transistors; microwave amplifiers; microwave measurement; semiconductor device models; solid-state microwave circuits; wideband amplifiers; 1 to 40 GHz; 8 to 18 GHz; K-band; K??-band; MODFET; computer-aided design; cryogenically-coolable amplifiers; low-noise amplifiers L-band; noise parameters; optimal noise performance; single frequency measurement; wideband amplifiers; wideband noise model; Bandwidth; Broadband amplifiers; Electrical resistance measurement; FETs; Frequency measurement; Ice; Low-noise amplifiers; Noise measurement; Packaging; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99806

Filename

99806