Title :
An analysis of program and erase operation for FC-SGT flash memory cells
Author :
Hioki, Masakazu ; Endoh, Tetsuo ; Sakuraba, Hiroshi ; Lenski, Markus ; Masuoka, Fujio
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
The floating channel type surrounding gate transistor (FC-SGT) flash memory cell realizes high-speed bipolarity program and erase operations. In this investigation, the time dependence of the surface potential in the floating channel region, which strongly affects program and erase performance, is studied during program and erase operation. By analyzing the carrier generation processes in the floating channel region, the program and erase operation for FC-SGT flash memory cells is clarified
Keywords :
circuit simulation; flash memories; integrated circuit modelling; integrated memory circuits; surface potential; tunnelling; FC-SGT flash memory cells; carrier generation processes; floating channel region; floating channel type surrounding gate transistor flash memory cell; high-speed bipolarity program/erase operations; program/erase operation; program/erase operation analysis; program/erase performance; surface potential time dependence; Electrons; Flash memory; Flash memory cells; Impact ionization; Insulation; Nonvolatile memory; Silicon; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871221
