Title :
Lateral epitaxial overgrowth of and defect reduction in GaN thin films
Author :
Davis, Robert F. ; Nam, O.-H. ; Bremser, M.D. ; Zheleva, T.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The lateral overgrowth of GaN stripes patterned in a SiO2 mask deposited on GaN film/AlN buffer layer/6H-SiC(0001) substrates was investigated. To achieve lateral overgrowth, the second layer of GaN was deposited on the initial underlying GaN layer through the windows in the SiO2 mask. The deposited material grew vertically to the top of the mask and then both laterally over the mask and vertically until the lateral growth fronts from many different windows coalesced and formed a continuous layer
Keywords :
III-V semiconductors; gallium compounds; optical films; semiconductor epitaxial layers; substrates; vapour phase epitaxial growth; AlN; GaN; GaN film/AlN buffer layer/6H-SiC(0001) substrates; GaN stripes; GaN thin films; SiO2; SiO2 mask; continuous layer; defect reduction; lateral epitaxial overgrowth; lateral growth fronts; lateral overgrowth; underlying GaN layer; Atomic force microscopy; Atomic layer deposition; Buffer layers; Gallium nitride; Rough surfaces; Scanning electron microscopy; Substrates; Temperature; Transistors; Transmission electron microscopy;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737879
