Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides

Author

Asenov, A. ; Kaya, S.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2000

fDate

2000

Firstpage

135

Lastpage

138

Abstract

In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the quantum mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples

Keywords

MOSFET; correlation methods; dielectric thin films; fluctuations; gradient methods; interface roughness; interface structure; quantum interference phenomena; semiconductor device models; SiO₂-Si; decanano MOSFETs; density gradient simulation; interface auto-correlation function; local oxide thickness fluctuations; oxide interface roughness; oxide thickness fluctuations; quantum mechanical effects; random 2D interface surfaces; simulation; threshold voltage; threshold voltage fluctuations; ultrathin gate oxides; Atomic layer deposition; Boundary conditions; Electrons; Fluctuations; MOSFETs; Poisson equations; Quantum mechanics; Rough surfaces; Surface roughness; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871226

Filename

871226