Title :
Super low-noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHz
Author :
Hosogi, K. ; Ayaki, N. ; Kato, T. ; Oku, T. ; Kohno, Yusuke ; Nakano, H. ; Shimura, T. ; Takano, H. ; Nishitani, K.
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
An advanced self-aligned multilayer gate FET (SAMFET) has been developed for super-low-noise monolithic microwave integrated circuit (MMIC) amplifiers. Reduction of gate resistance by adopting a novel T-shaped multilayer gate results in a 0.2-dB improvement of the minimum noise figure compared with conventional SAMFETs. At 12-GHz, the advanced SAMFET gives a minimum noise figure of 0.87 dB with associated gain of 10.62 dB. Excellent uniformity of performance and high reliability are confirmed. They are attributed to a complete planar structure and refractory WSi gate contact. This technology is considered promising for high-performance, low-cost MMICs.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; electron device noise; gallium arsenide; microwave amplifiers; solid-state microwave devices; 0.87 dB; 10.62 dB; 12 GHz; GaAs; MESFET; SAMFETs; T-shaped multilayer gate; WSi gate contact; gate resistance; low-cost MMICs; low-noise self-aligned gate; monolithic microwave integrated circuit; noise figure; planar structure; reliability; self-aligned multilayer gate FET; FET integrated circuits; Gallium arsenide; MESFETs; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Nonhomogeneous media;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99807
