Title :
DC and AC performance analysis of 25 nm symmetric/asymmetric double-gate, back-gate and bulk CMOS
Author :
Ieong, Meikei ; Wong, H.-S Philip ; Taur, Yuan ; Oldiges, Phil ; Frank, David
Author_Institution :
IBM SRDC, Hopewell Junction, NY, USA
Abstract :
In this paper, the performance of 25 nm double-gate, back-gate and super-halo CMOS devices has been analyzed, including the self-consistent 2D quantization effect. The drive current is enhanced by the gate-to-body coupling effect for double-gate with ultra-thin body. The channel quantization effect can substantially degrade the drive current for asymmetric double-gate, back-gate, and bulk CMOS ICs. It is demonstrated that the exceptional SCE immunity in SDG offers substantial performance leverage over conventional MOSFET structures
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; quantisation (quantum theory); quantum interference phenomena; 25 nm; AC performance analysis; DC performance analysis; MOSFET structures; SCE immunity; asymmetric double-gate CMOS; asymmetric double-gate CMOS ICs; back-gate CMOS; bulk CMOS; channel quantization effect; double-gate CMOS; drive current; gate-to-body coupling effect; self-consistent 2D quantization effect; super-halo CMOS devices; symmetric double-gate CMOS; ultra-thin body; Degradation; MOSFET circuits; Performance analysis; Poisson equations; Potential energy; Quantization; Semiconductor device modeling; Semiconductor films; Silicon; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871229
