Title :
Long-term current instability of AlGaAs/GaAs HBTs: an overview
Author_Institution :
Electr. & Comput. Eng. Dept., Nat. Univ. of Singapore, Singapore
Abstract :
This paper provides an overview of the long-term current instability of AlGaAs/GaAs heterojunction bipolar transistors (HBTs), which is a major concern in HBT reliability. Topics covered include: typical HBT post-burn-in characteristics; physical mechanisms contributing to the HBT long-term current gain drift; models for predicting the HBT mean time to failure (MTTF); and non-typical HBT post-burn-in behavior and its physical insight
Keywords :
III-V semiconductors; aluminium compounds; current distribution; failure analysis; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; reviews; semiconductor device models; semiconductor device reliability; temperature distribution; AlGaAs-GaAs; AlGaAs/GaAs HBTs; HBT post-burn-in characteristics; HBT reliability; current distribution; long-term current gain drift; long-term current instability; mean time to failure; models; overview; physical mechanisms; temperature distribution; Circuit simulation; Gallium arsenide; Heterojunction bipolar transistors; Medical simulation; Phased arrays; Predictive models; Radiative recombination; Temperature; Testing; Thermal stresses;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668217
