Title :
Kinetics of boron activation
Author :
Mokhberi, Ali ; Griffin, Peter B. ; Plummer, James D.
Abstract :
The kinetics of boron activation were studied for a 40 keV 2×1014 cm-2 boron implant. A large matrix of anneals with temperatures and times ranging from 500°C to 1000°C and 1 second to 30 minutes, respectively, was considered. The active dose was monitored using Hall measurement, and the results were modeled using the dopant defect models in SUPREM4
Keywords :
Hall effect; annealing; boron; doping profiles; elemental semiconductors; integrated circuit measurement; ion implantation; process monitoring; reaction kinetics; semiconductor process modelling; silicon; 1 s to 30 min; 40 keV; 500 to 1000 C; Hall measurement; SUPREM4 models; Si:B; active dose monitoring; anneal temperature; anneal time; boron activation; boron activation kinetics; boron implant; dopant defect models; Boron; Implants; Kinetic theory; Magnetic field measurement; Monitoring; Rapid thermal annealing; Semiconductor device modeling; Semiconductor process modeling; Solids; Temperature distribution;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871233
