Title :
Digital fuse circuit based on floating gate technology in a standard CMOS process
Author :
Craciun, Mihai ; Bogdan, Daniela
Author_Institution :
ON Semicond., Bucharest, Romania
Abstract :
This paper presents a digital fuse circuit based on floating gate technology fabricated in a conventional CMOS process. It is basically a non-volatile memory cell that has programming/erasing capabilities implemented by Fowler-Nordheim tunneling. Concept design advantages are sustained by simulation and testing results.
Keywords :
CMOS digital integrated circuits; digital circuits; random-access storage; CMOS; Fowler-Nordheim tunneling; digital fuse circuit; floating gate technology; nonvolatile memory cell; CMOS process; CMOS technology; Circuits; Electrons; Fuses; Logic programming; MOSFETs; Nonvolatile memory; Tunneling; Voltage control;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336654
