• DocumentCode
    2451476
  • Title

    Appropriate initial damage conditions for “three-stream” point defect diffusion models

  • Author

    Bork, I. ; Molzer, W.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    175
  • Lastpage
    178
  • Abstract
    This paper describes progress made in modeling transient enhanced diffusion (TED) on the basis of “three-stream” point defect diffusion models. Such models show artificially high transient diffusion at temperatures below approximately 800°C when standard initial damage conditions are used. Using appropriate conditions for the initial distribution of dopants, point defects and clusters, however, we were able to achieve surprisingly good results for TED experiments between 600°C and 1100°C and temperature ramp rates between 10°C/min (furnace anneal) and 100°C/sec (RTP) even with a “three-stream” diffusion model
  • Keywords
    annealing; diffusion; doping profiles; ion implantation; point defects; rapid thermal annealing; segregation; semiconductor process modelling; 600 to 1100 C; 800 C; RTP; TED; cluster distribution; diffusion model; dopant distribution; furnace anneal; initial damage conditions; ion implant activation; point defect distribution; standard initial damage conditions; temperature ramp rates; three-stream point defect diffusion models; transient diffusion; transient enhanced diffusion modeling; Annealing; Appropriate technology; Boron; Equations; Fabrication; Kinetic theory; Predictive models; Semiconductor process modeling; Silicon; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    0-7803-6279-9
  • Type

    conf

  • DOI
    10.1109/SISPAD.2000.871236
  • Filename
    871236