DocumentCode :
2451476
Title :
Appropriate initial damage conditions for “three-stream” point defect diffusion models
Author :
Bork, I. ; Molzer, W.
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2000
fDate :
2000
Firstpage :
175
Lastpage :
178
Abstract :
This paper describes progress made in modeling transient enhanced diffusion (TED) on the basis of “three-stream” point defect diffusion models. Such models show artificially high transient diffusion at temperatures below approximately 800°C when standard initial damage conditions are used. Using appropriate conditions for the initial distribution of dopants, point defects and clusters, however, we were able to achieve surprisingly good results for TED experiments between 600°C and 1100°C and temperature ramp rates between 10°C/min (furnace anneal) and 100°C/sec (RTP) even with a “three-stream” diffusion model
Keywords :
annealing; diffusion; doping profiles; ion implantation; point defects; rapid thermal annealing; segregation; semiconductor process modelling; 600 to 1100 C; 800 C; RTP; TED; cluster distribution; diffusion model; dopant distribution; furnace anneal; initial damage conditions; ion implant activation; point defect distribution; standard initial damage conditions; temperature ramp rates; three-stream point defect diffusion models; transient diffusion; transient enhanced diffusion modeling; Annealing; Appropriate technology; Boron; Equations; Fabrication; Kinetic theory; Predictive models; Semiconductor process modeling; Silicon; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
Type :
conf
DOI :
10.1109/SISPAD.2000.871236
Filename :
871236
Link To Document :
بازگشت