DocumentCode
2451496
Title
Characteristics of silicon nano-scale devices
Author
Hiramoto, T. ; Majima, H.
Author_Institution
VLSI Design & Educ. Center, Tokyo Univ., Japan
fYear
2000
fDate
2000
Firstpage
179
Lastpage
183
Abstract
Extremely small silicon MOS devices in a 10-nm scale are successfully fabricated and characterized at room temperature and low temperatures. In such small devices, the quantum confinement effect and single electron charging effect manifest themselves in device characteristics even at room temperature. Device modeling challenges for nanoscale MOSFETs are also discussed
Keywords
MOSFET; nanotechnology; quantum interference phenomena; semiconductor device measurement; semiconductor device models; 10 nm; 20 C; SiO2-Si; device characteristics; device modeling; low temperature characterisation; nanoscale MOSFETs; quantum confinement effect; room temperature characterisation; silicon MOS devices; silicon nano-scale device characteristics; silicon nano-scale devices; single electron charging effect; Electrons; Fabrication; MOS devices; MOSFETs; Nanoscale devices; Potential well; Silicon; Temperature; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871237
Filename
871237
Link To Document