Title :
Characteristics of silicon nano-scale devices
Author :
Hiramoto, T. ; Majima, H.
Author_Institution :
VLSI Design & Educ. Center, Tokyo Univ., Japan
Abstract :
Extremely small silicon MOS devices in a 10-nm scale are successfully fabricated and characterized at room temperature and low temperatures. In such small devices, the quantum confinement effect and single electron charging effect manifest themselves in device characteristics even at room temperature. Device modeling challenges for nanoscale MOSFETs are also discussed
Keywords :
MOSFET; nanotechnology; quantum interference phenomena; semiconductor device measurement; semiconductor device models; 10 nm; 20 C; SiO2-Si; device characteristics; device modeling; low temperature characterisation; nanoscale MOSFETs; quantum confinement effect; room temperature characterisation; silicon MOS devices; silicon nano-scale device characteristics; silicon nano-scale devices; single electron charging effect; Electrons; Fabrication; MOS devices; MOSFETs; Nanoscale devices; Potential well; Silicon; Temperature; Threshold voltage; Very large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871237
