Title :
Well-tempered MOSFETs: 1D versus 2D quantum analysis
Author :
Abramo, A. ; Selmi, L. ; Yu, Z. ; Dutton, R.W.
Author_Institution :
DIEGM, Udine Univ., Italy
Abstract :
This paper presents the two-dimensional quantum mechanical simulation of scaled “well-tempered MOSFETs” (Assad et al, IEDM Tech. Dig., p. 547, 1999, and IEEE trans. Electron Dev. vol. 47, p. 232, 2000) featuring different effective channel lengths in the deep sub-micron range. The simulation results were obtained by means of a two-dimensional Schrodinger solver that had been previously applied to idealized MOS structures. Comparison between one- and two dimensional approaches is presented, and the difference between the two models are highlighted
Keywords :
MOSFET; Schrodinger equation; nanotechnology; semiconductor device models; 1D quantum analysis; 2D Schrodinger solver; 2D quantum analysis; 2D quantum mechanical simulation; effective channel length; idealized MOS structures; models; nanoscale MOSFETs; scaled well-tempered MOSFETs; simulation; well-tempered MOSFETs; Analytical models; Eigenvalues and eigenfunctions; Electrons; Helium; Linear systems; MOSFET circuits; Nanoscale devices; Physics; Predictive models; Schrodinger equation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871239
