Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS

A two-dimensional MOS device simulator including quantum-mechanical effects has been developed and applied to surface- and buried-channel p-MOS devices. The Schrodinger equation is solved, retaining a large number of eigenstates, which are then used to build a modified classical distribution accounting for the high energy part of the distribution. With this approach, discontinuities in the gate capacitance near flat bands have been eliminated without introducing any empirical parameter. For accurate device simulation, experimental data on the hole mobility were collected, and a nonlocal mobility model was used for carriers in the bound levels. A standard mobility model is adopted instead for the classically-distributed carriers. Results are presented for the gate capacitance and drain current of 0.35 μm p-MOSFET devices, showing a good agreement over a wide range of channel doping concentrations