DocumentCode :
2451580
Title :
Nonlinear discretization scheme for the density-gradient equations
Author :
Ancona, M.G. ; Biegel, B.A.
Author_Institution :
Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA
fYear :
2000
fDate :
2000
Firstpage :
196
Lastpage :
199
Abstract :
Density-gradient theory enables engineering-oriented analyses of electronic devices in which quantum confinement and tunneling phenomena are significant (Ancona and Tiersten, 1987; Ancona, 1990; Ancona et al, 1999). A nonlinear three-point discretization of the density-gradient equations is presented. The new method, an exponential-fitting scheme, is evaluated using numerical examples involving both quantum confinement and tunneling. The nonlinear discretization is shown to perform far better than the conventional linear version allowing for a substantial easing in the mesh refinement, especially in tunneling problems
Keywords :
MOS capacitors; curve fitting; mesh generation; quantum interference devices; quantum interference phenomena; semiconductor device models; tunnelling; MOS capacitors; density-gradient equations; density-gradient theory; electronic devices; engineering-oriented analysis; exponential-fitting scheme; mesh refinement; nonlinear discretization; nonlinear discretization scheme; nonlinear three-point discretization; numerical evaluation; quantum confinement; tunneling; tunneling phenomena; Charge carrier processes; Differential equations; Electrons; Laboratories; NASA; Nonlinear equations; Potential well; Quantum mechanics; Space technology; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
Type :
conf
DOI :
10.1109/SISPAD.2000.871241
Filename :
871241
Link To Document :
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