Title :
Model for the evolution of dislocation loops in silicon
Author :
Avci, Ibrahim ; Rueda, Hernan A. ; Law, Mark E.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
A single statistical point defect based model for the evolution of dislocation loops during oxidation and annealing under an inert ambient is developed. The model assumes that the radius and the density of the dislocation loops follow a log normal distribution. The capture or emission rate of interstitials bounded by the dislocation is proportional to the rates of emission and absorption of point defects at the loop boundaries modulated by a log normal loop distribution function. The model also incorporates the stress due to dislocation loops. Published data on loop evolution and distribution under oxidation and inert ambient annealing conditions are used to calibrate the loop model
Keywords :
annealing; dislocation loops; elemental semiconductors; internal stresses; interstitials; log normal distribution; oxidation; semiconductor process modelling; silicon; Si; Si dislocation loop evolution model; SiO2-Si; annealing; dislocation loop density; dislocation loop radius; dislocation loop stress; dislocation loops; dislocation-bounded interstitials; inert ambient; inert ambient annealing conditions; interstitial capture rate; interstitial emission rate; log normal distribution; log normal loop distribution function; loop boundaries; loop distribution; loop evolution; loop model calibration; oxidation; oxidation conditions; point defect absorption rate; point defect emission rate; silicon; single statistical point defect based model; Absorption; Amorphous materials; Annealing; Atomic layer deposition; Ion implantation; Log-normal distribution; Oxidation; Probability distribution; Silicon; Stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871245
