Title :
A 2.8-V power supply CMOS high band LNA for UMTS
Author :
Cojan, Radu Adrian
Author_Institution :
SCS, Infineon Technol. Romania, Bucharest, Romania
Abstract :
In this paper, a Low Noise Amplifier used in the new generation UMTS (3G) receivers in a standard 130 nm RF CMOS process is presented. The LNA has programmable 3 steps gain. The frequency range of interest for the LNA is between 2110 and 2170 MHz. The LNA has a measured maximum gain value is of 17.5 dB, a Noise Figure of 1.7 dB, S11 of -12 dB, S22 of -16 dB, at a supply voltage of 2.8 V. The LNA has a temperature compensated gain by forcing an IPTAT current through a resistor in order to adjust the biasing voltage modifications with temperature.
Keywords :
3G mobile communication; low noise amplifiers; power supply circuits; CMOS high band; LNA; RF CMOS process; UMTS; low noise amplifier; noise figure; temperature compensated gain; voltage 2.8 V; 3G mobile communication; CMOS process; Current measurement; Low-noise amplifiers; Noise generators; Power supplies; Radio frequency; Radiofrequency amplifiers; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336673
