Title :
Optimizing free carrier absorption measurements for power devices by physically rigorous simulation
Author :
Thalhammer, Robert ; Hille, Frank ; Wachutka, Gerhard
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for optimization of the optical set-up and the sample geometries which minimize the unavoidable experimental errors are presented
Keywords :
carrier density; error analysis; light propagation; measurement by laser beam; optimisation; power semiconductor devices; semiconductor device measurement; semiconductor process modelling; specimen preparation; carrier distribution; error minimization; free carrier absorption measurement optimization; free carrier absorption measurements; laser probing; measurement process; optical set-up; optimization; physically rigorous simulation; power devices; probing beam; sample geometries; sample preparation; wave propagation; Absorption; Charge carrier density; Geometry; Laser beams; Optical propagation; Optical surface waves; Plasma measurements; Power measurement; Refractive index; Signal detection;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871255
