Optimizing free carrier absorption measurements for power devices by physically rigorous simulation

Author

Thalhammer, Robert ; Hille, Frank ; Wachutka, Gerhard

Author_Institution

Infineon Technol., Munich, Germany

fYear

2000

fDate

2000

Firstpage

249

Lastpage

252

Abstract

The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for optimization of the optical set-up and the sample geometries which minimize the unavoidable experimental errors are presented

Keywords

carrier density; error analysis; light propagation; measurement by laser beam; optimisation; power semiconductor devices; semiconductor device measurement; semiconductor process modelling; specimen preparation; carrier distribution; error minimization; free carrier absorption measurement optimization; free carrier absorption measurements; laser probing; measurement process; optical set-up; optimization; physically rigorous simulation; power devices; probing beam; sample geometries; sample preparation; wave propagation; Absorption; Charge carrier density; Geometry; Laser beams; Optical propagation; Optical surface waves; Plasma measurements; Power measurement; Refractive index; Signal detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871255

Filename

871255