A new method to determine channel mobility model parameters in submicron MOSFET´s using measured S-parameters

Author

Lee, Seonghearn ; Yu, Hyun Kyu

Author_Institution

Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-do, South Korea

fYear

2000

fDate

2000

Firstpage

253

Lastpage

256

Abstract

A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFETs. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods

Keywords

MOSFET; S-parameters; carrier mobility; semiconductor device measurement; semiconductor device models; MOSFETs; S-parameters; channel mobility model parameters; effective channel length measurement; effective channel mobility model parameters; mask gate length; measured S-parameters; parasitic capacitance calibration; slope extraction; test device; total gate charge; Capacitance-voltage characteristics; Charge measurement; Current measurement; Equations; Length measurement; MOSFET circuits; Parasitic capacitance; Scattering parameters; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871256

Filename

871256