Title :
A new method to determine channel mobility model parameters in submicron MOSFET´s using measured S-parameters
Author :
Lee, Seonghearn ; Yu, Hyun Kyu
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-do, South Korea
Abstract :
A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFETs. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods
Keywords :
MOSFET; S-parameters; carrier mobility; semiconductor device measurement; semiconductor device models; MOSFETs; S-parameters; channel mobility model parameters; effective channel length measurement; effective channel mobility model parameters; mask gate length; measured S-parameters; parasitic capacitance calibration; slope extraction; test device; total gate charge; Capacitance-voltage characteristics; Charge measurement; Current measurement; Equations; Length measurement; MOSFET circuits; Parasitic capacitance; Scattering parameters; Testing; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871256
