Title :
Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors
Author :
Eikyu, K. ; Takashino, H. ; Kidera, M. ; Teramoto, A. ; Umeda, H. ; Ishikawa, K. ; Kotani, N. ; Inuishi, M.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
The physical oxide thickness of ultrathin oxides is extracted using the tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool implements a nonlinear least square solver and GUIs. A tunneling current model is incorporated into the MIDSIP-T device simulator and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb=3.3 eV and mc*/m0=0.41, is obtained after the extraction of various samples
Keywords :
MOS capacitors; MOS integrated circuits; dielectric thin films; graphical user interfaces; least squares approximations; semiconductor device measurement; semiconductor device models; tunnelling; 3.3 eV; GUIs; MIDSIP-T device simulator; MOS capacitors; SiO2-Si; core simulator; electrical characteristics; extraction system; extraction tool; nonlinear least square solver; physical oxide thickness; physical oxide thickness extraction; sample extraction; semiautomatic extraction; transition layer; tunneling current characteristics; tunneling current model; ultrathin oxides; unified parameter set; very thin oxide thickness; Capacitance-voltage characteristics; Electric variables; Least squares methods; MOS capacitors; MOSFETs; Oxidation; Semiconductor devices; Thickness measurement; Tunneling; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871257
