Simulation of multiple-bit soft errors induced by cosmic ray neutrons in DRAMs

Author

Tosaka, Y. ; Satoh, S.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2000

fDate

2000

Firstpage

265

Lastpage

268

Abstract

Although it has been shown that cosmic ray neutrons play an important role in soft error (SE) phenomena, some important issues in neutron-induced SE phenomena are still to be clarified. In this paper, neutron-induced multiple-bit SEs in 16 Mb DRAMs are investigated numerically using the Neutron-Induced Soft Error Simulator (NISES), and simulated results are compared to experimental data. Scaling effects on multiple-bit SEs, effects of configuration patterns on double-bit SE rates, and the influence of multiple-bit SEs on an error correction code are discussed

Keywords

DRAM chips; circuit simulation; cosmic ray neutrons; error correction codes; integrated circuit measurement; integrated circuit modelling; neutron effects; DRAMs; NISES; Neutron-Induced Soft Error Simulator; SE phenomena; configuration pattern effects; cosmic ray neutrons; double-bit SE rates; error correction code; multiple-bit SEs; multiple-bit soft errors; neutron-induced SE phenomena; neutron-induced multiple-bit SEs; scaling effects; simulation; soft error phenomena; Atmospheric measurements; Boundary conditions; Databases; Error correction codes; Neutrons; Particle beams; Power supplies; Random access memory; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871259

Filename

871259