Title :
Choosing an optimum large signal model for GaAs MESFETs and HEMTs
Author :
Miller, M. ; Golio, M. ; Beckwith, B. ; Arnold, E. ; Halchin, D. ; Ageno, S. ; Dorn, S.
Author_Institution :
Motorola Strategic Electron. Div., Chandler, AZ, USA
Abstract :
Seven large signal MESFET models and three newly developed HEMT (high-electron-mobility transistor) models have been compared, providing the microwave circuit designer with a practical benchmark. The error for each model is quantified and minimized using a modified Newton´s method with the restricted step technique of K. Levenberg (1944) and D. Marquardt (1963). This minimum obtainable error is used as a basis for comparing the models. The validity of this approach is confirmed by comparing predicted to measured large-signal performance made on a Triquint 0.5- mu m-gate-length MESFET. The model comparison tool has also been utilized to develop a general approach to large signal HEMT modeling for circuit simulation applications. A 0.7- mu m-gate-length pseudomorphic HEMT device was used for this portion of the study.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; high electron mobility transistors; nonlinear network analysis; semiconductor device models; solid-state microwave devices; 0.5 micron; 0.7 micron; 0.7- mu m-gate-length pseudomorphic HEMT device; GaAs transistors; Triquint 0.5- mu m-gate-length MESFET; circuit simulation applications; high-electron-mobility transistor; large signal HEMT modeling; large signal MESFET models; measured large-signal performance; model comparison tool; model selection; modified Newton´s method; optimum large signal model; semiconductors; Capacitance; Circuit simulation; Equations; Gallium arsenide; HEMTs; MESFETs; MODFETs; Parameter extraction; Predictive models; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99812
