Bulk and edge (surface) leakage reverse current in PN junctions from commercial semiconductor devices

Performance limitations of commercial semiconductor devices during operation at high temperature or in the breakdown region are related to leakage current flow through the semiconductor-dielectric interface from the PN junction periphery. Analysis of reverse current - voltage characteristics for PN junctions from commercial thyristors and diodes indicates that voltage dependence of the reverse current as V_R ^1/2 or V_R ^1/3 (V_R is the reverse voltage) is possible at dominant edge current. Voltage dependence as V_R ^1/n where n is greater than 3 is also possible. For PN junctions with high density of generation-recombination centres, a bulk current component is dominant at lower applied voltage but at higher applied voltage, the edge current is the primary component. The junction leakage reverse current from the junction periphery is not taken into consideration in the theory.