CMOS LNA with tunable resonance frequency

Author

Agavriloaie, Florentina ; Spiridon, Silvian ; Dan, Claudius ; Bodea, Mircea

Author_Institution

ETTI Dept., Univ. of Bucharest, Romania

Volume

2

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

439

Lastpage

442

Abstract

The tuned Low Noise Amplifier (LNA) is an attractive solution for applications asking for both low power consumption and low noise figure (NF), such as wireless sensors. This paper presents the CMOS LNA with a tunable resonance frequency analysis focused on noise-linearity-bandwidth trade-offs required for implementing a variable resonance frequency. To change the resonance frequency the MOS capacitor capacitance dependence on the DC gate voltage is used. By employing a MOS capacitor bank, the proposed LNA concept can cover a large frequency band, in a few programmable steps.

Keywords

CMOS analogue integrated circuits; MOS capacitors; circuit tuning; low noise amplifiers; CMOS LNA; DC gate voltage; MOS capacitor bank; MOS capacitor capacitance dependence; noise-linearity-bandwidth trade-off; tunable resonance frequency analysis; tuned low noise amplifier; variable resonance frequency; Capacitance; Energy consumption; Low-noise amplifiers; MOS capacitors; Noise figure; Noise measurement; Resonance; Resonant frequency; Voltage; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336684

Filename

5336684