Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes

Author

Bellone, Salvatore ; Albanese, Loredana Freda ; Licciardo, Gian Domenico

Author_Institution

Dept. of Inf. & Electr. Eng. (DIIIE), Univ. of Salerno, Fisciano, Italy

Volume

2

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

409

Lastpage

412

Abstract

By exploiting a novel analytical model of the open-circuit voltage decay (OCVD) applied to 4H-SiC pin diodes, the limitations of the OCVD method when used for carrier lifetime measurement of SiC epilayers are explored. Since the model is able to describe the transient of a generic diode when switched from arbitrary current level, it reveals a comprehensive tool to show the influence of the recombination velocity at the epilayer interfaces on the measurement method and to prove the effectiveness of the measurement technique also for very thick epilayers.

Keywords

electron-hole recombination; p-i-n diodes; silicon compounds; wide band gap semiconductors; SiC; carrier lifetime measurement; epilayer interfaces; epilayers; generic diode; open circuit voltage decay; pin diodes; recombination velocity; semiconductor diodes; Analytical models; Charge carrier density; Charge carrier lifetime; Electric variables measurement; Radiative recombination; Semiconductor device modeling; Semiconductor diodes; Silicon carbide; Thermal conductivity; Voltage; 4H-SiC; Analytical model; OCVD; Recombination lifetime;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336692

Filename

5336692