Title :
Defect production in silicon and germanium by low temperature irradiation
Author :
Lazanu, S. ; Lazanu, I. ; Lepadatu, A. ; Stavarache, I.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Abstract :
In this communication, we study the production of defects by energetic ions in silicon and germanium, at very low temperatures, as dependencies of non-ionizing energy loss and number of displacements on the ion kinetic energy, and also the partition of the energy deposited between ionization, creation of defects and phonons, short time after the interaction.
Keywords :
elemental semiconductors; energy loss of particles; germanium; gold; helium; impurity states; ion beam effects; phonons; silicon; uranium; vacancies (crystal); Ge:Au; Ge:He; Ge:U; Si:Au; Si:He; Si:U; defect creation; germanium; ion kinetic energy; low temperature irradiation; nonionizing energy loss; phonons; radiation induced defect production; silicon; vacancy; Electrons; Energy loss; Germanium; Ionization; Kinetic energy; Phonons; Physics; Production; Silicon; Temperature dependence; defects; energy partition; germanium; ionization; phonons; silicon;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336700
