DocumentCode
2452375
Title
Defect production in silicon and germanium by low temperature irradiation
Author
Lazanu, S. ; Lazanu, I. ; Lepadatu, A. ; Stavarache, I.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest, Romania
Volume
2
fYear
2009
fDate
12-14 Oct. 2009
Firstpage
379
Lastpage
382
Abstract
In this communication, we study the production of defects by energetic ions in silicon and germanium, at very low temperatures, as dependencies of non-ionizing energy loss and number of displacements on the ion kinetic energy, and also the partition of the energy deposited between ionization, creation of defects and phonons, short time after the interaction.
Keywords
elemental semiconductors; energy loss of particles; germanium; gold; helium; impurity states; ion beam effects; phonons; silicon; uranium; vacancies (crystal); Ge:Au; Ge:He; Ge:U; Si:Au; Si:He; Si:U; defect creation; germanium; ion kinetic energy; low temperature irradiation; nonionizing energy loss; phonons; radiation induced defect production; silicon; vacancy; Electrons; Energy loss; Germanium; Ionization; Kinetic energy; Phonons; Physics; Production; Silicon; Temperature dependence; defects; energy partition; germanium; ionization; phonons; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-4413-7
Type
conf
DOI
10.1109/SMICND.2009.5336700
Filename
5336700
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