Title :
Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature
Author :
Iovu, M.S. ; Vasiliev, I.A. ; Shpotyuk, O.I.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
Abstract :
The quasi-static capacitance of As10Se90 amorphous film was studied in cycles of heating and cooling near the glass transition temperature Tg=343 K. Features in the capacitance behavior such as the non-exponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was accepted, that the capacitance measurements allow finding the glass transition in thin amorphous film of As10Se90 which is accompanied by freezing of some charged molecular dipoles.
Keywords :
amorphous semiconductors; arsenic compounds; dielectric relaxation; freezing; glass transition; semiconductor thin films; As10Se90; amorphous semiconductors; charged molecular dipoles; cooling; dielectric relaxation; freezing; glass transitions; glassy materials; heating; nonArrhenius form; quasistatic capacitance; thin amorphous film; Aging; Amorphous materials; Capacitance measurement; Cooling; Dielectric substrates; Glass; Heating; Pulse amplifiers; Pulse measurements; Temperature dependence; Chalcogenide films; Dielectric relaxation; Glass transition;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336702
