Trap space charge limited current in pulsed laser deposited AlN:Cr films

Author

Simeonov, S. ; Minkov, I. ; Szekeres, A. ; Grigorescu, S. ; Socol, G. ; Ristoscu, C. ; Mihailescu, I.N.

Author_Institution

Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria

Volume

2

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

375

Lastpage

378

Abstract

AlN films, doped with Cr, were deposited on p-Si substrates by pulsed laser deposition (PLD). Al-PLD AlN:Cr-Si MIS structures were formed and their current-voltage and 1 MHz admittance characteristics were measured. The analysis of the direct and alternating current conductance and capacitance dependences of these MIS structures on applied voltage revealed that the charge transport in these films is carried out by the mechanism of trap space charge limited current.

Keywords

III-V semiconductors; MIS structures; aluminium compounds; chromium; electric admittance; elemental semiconductors; high-frequency effects; pulsed laser deposition; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; silicon; space-charge-limited conduction; wide band gap semiconductors; AlN:Cr-Si; MIS structures; Si; alternating current conductance; capacitance dependence; charge transport; current-voltage characteristics; p-Si substrates; pulsed laser deposition; thin films; trap space charge; Chromium; Current measurement; Laser theory; Magnetic films; Optical pulses; Pulsed laser deposition; Solid lasers; Space charge; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336703

Filename

5336703