Title :
Trap space charge limited current in pulsed laser deposited AlN:Cr films
Author :
Simeonov, S. ; Minkov, I. ; Szekeres, A. ; Grigorescu, S. ; Socol, G. ; Ristoscu, C. ; Mihailescu, I.N.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
AlN films, doped with Cr, were deposited on p-Si substrates by pulsed laser deposition (PLD). Al-PLD AlN:Cr-Si MIS structures were formed and their current-voltage and 1 MHz admittance characteristics were measured. The analysis of the direct and alternating current conductance and capacitance dependences of these MIS structures on applied voltage revealed that the charge transport in these films is carried out by the mechanism of trap space charge limited current.
Keywords :
III-V semiconductors; MIS structures; aluminium compounds; chromium; electric admittance; elemental semiconductors; high-frequency effects; pulsed laser deposition; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; silicon; space-charge-limited conduction; wide band gap semiconductors; AlN:Cr-Si; MIS structures; Si; alternating current conductance; capacitance dependence; charge transport; current-voltage characteristics; p-Si substrates; pulsed laser deposition; thin films; trap space charge; Chromium; Current measurement; Laser theory; Magnetic films; Optical pulses; Pulsed laser deposition; Solid lasers; Space charge; Substrates; Voltage;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336703
