DocumentCode
245243
Title
Lithographic defect aware placement using compact standard Cells without inter-cell margin
Author
Seongbo Shim ; Yoojong Lee ; Youngsoo Shin
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear
2014
fDate
20-23 Jan. 2014
Firstpage
47
Lastpage
52
Abstract
Conventional standard cells contain extra space, called inter-cell margin, to prevent potential defects caused by lithography process. Margin is indeed necessary between some cell pairs, but there are also lots of cell pairs that do not yield any defects (or have very low probability of defects) when they are placed without margin. We address a new placement problem using standard cells without inter-cell margin. Placement should be done such that defect probability is made as small as possible while standard objectives such as wirelength is also pursued. The key in this approach is efficient computation of defect probabilities of all cell pairs and arranging them as a table that is referred to by a placer. We study how the cell pairs can be grouped by examining similar patterns along cell boundary, which greatly reduces the number of defect probability computation. The proposed placement method was evaluated on a few test circuits using 28-nm technology. Chip area was reduced by 10.8% on average with average and maximum defect probability kept below 0.4% and 4.1%, respectively.
Keywords
lithography; cell pairs; compact standard cells; defect probability computation; intercell margin; lithographic defect aware placement; size 28 nm; standard objectives; test circuits; wirelength; Computational modeling; Layout; Libraries; Lithography; Metals; Simulated annealing; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific
Conference_Location
Singapore
Type
conf
DOI
10.1109/ASPDAC.2014.6742865
Filename
6742865
Link To Document