A Simple Method to Optimize the Ballasting Resistor of RF Power HBT

Author

Dong-Yue, Jin ; Wan-Rong, Zhang ; Jian-jun, Qiu ; Pan, Gao ; Ying, Xiao

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2006

fDate

26-29 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Taking into account of the temperature dependence of emitter junction voltage, the valence-band discontinuity at emitter junction (DeltaE_v), and the bandgap narrowing due to heavy doping (DeltaE_g), a simple method to optimize the ballasting resistor of RF power heterojunction bipolar transistor (HBT) has been presented based on the thermal-electric feedback network analysis. The agreement between theory and experiment is shown to be excellent. Using this design flow, we can choosing the best ballasting resistor of power HBT needed for thermal stable operation under the specified working condition.

Keywords

circuit feedback; heterojunction bipolar transistors; power bipolar transistors; resistors; RF power HBT; RF power heterojunction bipolar transistor; ballasting resistor; emitter junction voltage; temperature dependence; thermal-electric feedback network analysis; valence-band discontinuity; Doping; Electronic ballasts; Heterojunction bipolar transistors; Optimization methods; Photonic band gap; Radio frequency; Resistors; Temperature dependence; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory, 2006. ISAPE '06. 7th International Symposium on

Conference_Location

Guilin

Print_ISBN

1-4244-0162-3

Electronic_ISBN

1-4244-0163-1

Type

conf

DOI

10.1109/ISAPE.2006.353290

Filename

4168331