Title :
A Simple Method to Optimize the Ballasting Resistor of RF Power HBT
Author :
Dong-Yue, Jin ; Wan-Rong, Zhang ; Jian-jun, Qiu ; Pan, Gao ; Ying, Xiao
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing
Abstract :
Taking into account of the temperature dependence of emitter junction voltage, the valence-band discontinuity at emitter junction (DeltaEv), and the bandgap narrowing due to heavy doping (DeltaEg), a simple method to optimize the ballasting resistor of RF power heterojunction bipolar transistor (HBT) has been presented based on the thermal-electric feedback network analysis. The agreement between theory and experiment is shown to be excellent. Using this design flow, we can choosing the best ballasting resistor of power HBT needed for thermal stable operation under the specified working condition.
Keywords :
circuit feedback; heterojunction bipolar transistors; power bipolar transistors; resistors; RF power HBT; RF power heterojunction bipolar transistor; ballasting resistor; emitter junction voltage; temperature dependence; thermal-electric feedback network analysis; valence-band discontinuity; Doping; Electronic ballasts; Heterojunction bipolar transistors; Optimization methods; Photonic band gap; Radio frequency; Resistors; Temperature dependence; Thermal resistance; Voltage;
Conference_Titel :
Antennas, Propagation & EM Theory, 2006. ISAPE '06. 7th International Symposium on
Conference_Location :
Guilin
Print_ISBN :
1-4244-0162-3
Electronic_ISBN :
1-4244-0163-1
DOI :
10.1109/ISAPE.2006.353290
