A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing

Author

Cherkaoui, K. ; Kallel, S. ; Marrakchi, G. ; Karoui, A.

Author_Institution

Inst. Nat. des Sci. Appliquees, Villeurbanne, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

59

Lastpage

62

Abstract

Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe_In trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material

Keywords

III-V semiconductors; annealing; electron traps; indium compounds; iron; photoconductivity; 0.12 to 0.66 eV; InP:Fe; activation energies; high temperature annealing; photoinduced current transient spectroscopy; thermal parameters; traps; Annealing; Current measurement; Electron traps; Indium phosphide; Iron; Photoconductivity; Spectroscopy; Substrates; Temperature; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570878

Filename

570878