Title :
Modeling MESFETs for intermodulation analysis of mixers and amplifiers
Author :
Maas, S.A. ; Neilson, D.
Abstract :
An examination is made of the problem of modeling GaAs MESFETs for calculations of intermodulation and spurious responses. It is shown that an adequate model must express not only the absolute I-V characteristics of the device, but also the derivatives of these characteristics. A large-signal FET model that models these derivatives more realistically than do previous models is proposed.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; microwave amplifiers; mixers (circuits); nonlinear network analysis; semiconductor device models; solid-state microwave circuits; GaAs; MESFET modeling; absolute I-V characteristics; amplifiers; calculations of intermodulation; derivatives; intermodulation analysis; large-signal FET model; mixers; semiconductors; spurious response calculations; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFET circuits; MESFET integrated circuits; National electric code; Predictive models; Research and development; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99815
