Title :
Numerical simulations for reverse recovery process investigations of LPE GaAs power diodes
Author :
Koel, Ants ; Rang, Toomas ; Voitovich, Viktor ; Toompuu, Jana
Author_Institution :
Thomas Johann Seebeck Dept. of Electron., Tallinn, Estonia
Abstract :
In this paper the reverse recovery of a fast GaAs pin-diode is investigated. Simulations show that the snappy behaviour observed at the measurements of the reverse recovery process of the experimental diode could take place only in cases where significant inductance in the measurement circuit is involved. Deep traps are not the cause for the snappiness effect.
Keywords :
III-V semiconductors; gallium arsenide; liquid phase epitaxial growth; numerical analysis; p-i-n diodes; power semiconductor diodes; GaAs; LPE power diode; fast pin-diode; liquid phase epitaxy; measurement circuit; numerical simulation; reverse recovery process; reverse recovery process investigation; Current measurement; Gallium arsenide; Integrated circuit modeling; Numerical models; Semiconductor diodes; Semiconductor process modeling; Silicon;
Conference_Titel :
Electronics Conference (BEC), 2012 13th Biennial Baltic
Conference_Location :
Tallinn
Print_ISBN :
978-1-4673-2775-6
DOI :
10.1109/BEC.2012.6376809
