DocumentCode
2452726
Title
Numerical simulations for reverse recovery process investigations of LPE GaAs power diodes
Author
Koel, Ants ; Rang, Toomas ; Voitovich, Viktor ; Toompuu, Jana
Author_Institution
Thomas Johann Seebeck Dept. of Electron., Tallinn, Estonia
fYear
2012
fDate
3-5 Oct. 2012
Firstpage
39
Lastpage
42
Abstract
In this paper the reverse recovery of a fast GaAs pin-diode is investigated. Simulations show that the snappy behaviour observed at the measurements of the reverse recovery process of the experimental diode could take place only in cases where significant inductance in the measurement circuit is involved. Deep traps are not the cause for the snappiness effect.
Keywords
III-V semiconductors; gallium arsenide; liquid phase epitaxial growth; numerical analysis; p-i-n diodes; power semiconductor diodes; GaAs; LPE power diode; fast pin-diode; liquid phase epitaxy; measurement circuit; numerical simulation; reverse recovery process; reverse recovery process investigation; Current measurement; Gallium arsenide; Integrated circuit modeling; Numerical models; Semiconductor diodes; Semiconductor process modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Conference (BEC), 2012 13th Biennial Baltic
Conference_Location
Tallinn
ISSN
1736-3705
Print_ISBN
978-1-4673-2775-6
Type
conf
DOI
10.1109/BEC.2012.6376809
Filename
6376809
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