• DocumentCode
    245279
  • Title

    On-chip ESD protection designs with SCR-based devices in RF integrated circuits

  • Author

    Chun-Yu Lin ; Rong-Kun Chang

  • fYear
    2014
  • fDate
    26-28 May 2014
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    CMOS technology has been used to implement the radio-frequency (RF) integrated circuits for consumer electronics. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with silicon-controlled rectifier (SCR) devices in RF integrated circuits is presented in this paper.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; radiofrequency integrated circuits; rectifiers; silicon; RF integrated circuits; SCR-based devices; Si; electrostatic discharge; nanoscale CMOS technology; on-chip ESD protection designs; silicon-controlled rectifier devices; CMOS integrated circuits; Electrostatic discharges; Radio frequency; Robustness; System-on-chip; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Consumer Electronics - Taiwan (ICCE-TW), 2014 IEEE International Conference on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ICCE-TW.2014.6904031
  • Filename
    6904031