DocumentCode :
245279
Title :
On-chip ESD protection designs with SCR-based devices in RF integrated circuits
Author :
Chun-Yu Lin ; Rong-Kun Chang
fYear :
2014
fDate :
26-28 May 2014
Firstpage :
15
Lastpage :
16
Abstract :
CMOS technology has been used to implement the radio-frequency (RF) integrated circuits for consumer electronics. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with silicon-controlled rectifier (SCR) devices in RF integrated circuits is presented in this paper.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; radiofrequency integrated circuits; rectifiers; silicon; RF integrated circuits; SCR-based devices; Si; electrostatic discharge; nanoscale CMOS technology; on-chip ESD protection designs; silicon-controlled rectifier devices; CMOS integrated circuits; Electrostatic discharges; Radio frequency; Robustness; System-on-chip; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Consumer Electronics - Taiwan (ICCE-TW), 2014 IEEE International Conference on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ICCE-TW.2014.6904031
Filename :
6904031
Link To Document :
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