DocumentCode
245279
Title
On-chip ESD protection designs with SCR-based devices in RF integrated circuits
Author
Chun-Yu Lin ; Rong-Kun Chang
fYear
2014
fDate
26-28 May 2014
Firstpage
15
Lastpage
16
Abstract
CMOS technology has been used to implement the radio-frequency (RF) integrated circuits for consumer electronics. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with silicon-controlled rectifier (SCR) devices in RF integrated circuits is presented in this paper.
Keywords
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; radiofrequency integrated circuits; rectifiers; silicon; RF integrated circuits; SCR-based devices; Si; electrostatic discharge; nanoscale CMOS technology; on-chip ESD protection designs; silicon-controlled rectifier devices; CMOS integrated circuits; Electrostatic discharges; Radio frequency; Robustness; System-on-chip; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics - Taiwan (ICCE-TW), 2014 IEEE International Conference on
Conference_Location
Taipei
Type
conf
DOI
10.1109/ICCE-TW.2014.6904031
Filename
6904031
Link To Document