Title :
Experimental study of surface distortions in silicon carbide caused by diffusion welding
Author :
Mizsei, János ; Korolkov, Oleg ; Sleptsuk, Natalja ; Toompuu, Jana ; Rang, Toomas
Author_Institution :
Dept. of Electron Devices, Tech. Univ. of Budapest, Budapest, Hungary
Abstract :
This paper reports a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the last method has shown an increase in the density of surface states after the diffusion welding from 2×1015 cm-2 to 3.5×1016 cm-2.
Keywords :
crystal defects; deep level transient spectroscopy; deep levels; electronic density of states; silicon compounds; surface states; welding; wide band gap semiconductors; DLTS method; Kelvin probe methods; SiC; deep level transient spectroscopy; deep levels; density of surface states; diffusion welding; silicon carbide crystal lattice; surface distortions; surface state identification; Capacitors; Electric potential; Kelvin; Semiconductor device measurement; Silicon carbide; Welding;
Conference_Titel :
Electronics Conference (BEC), 2012 13th Biennial Baltic
Conference_Location :
Tallinn
Print_ISBN :
978-1-4673-2775-6
DOI :
10.1109/BEC.2012.6376813
