• DocumentCode
    2453178
  • Title

    Application of data sheet based dynamic semiconductor models in the simulation of inverter welding power sources

  • Author

    Fischer, Wolfgang ; Mecke, Hubert

  • Author_Institution
    Inst. of Electr. Power Syst. (IESY), Otto-von-Guericke-University of Magdeburg, Germany
  • Volume
    3
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    1369
  • Abstract
    Nowadays simulation tools are widely used in the design process of power sources for arc and resistance welding. A modern inverter-type welding power source is a complex power electronic system, which is characterized by high switching frequency, fast dynamic response and a special load adapted process control. Although for an overall simulation on the system level simple semiconductor models may be sufficient, some relevant problems can only be solved on a circuit level simulation considering dynamic semiconductor models, driving circuits and parasitics. In this paper experiences with the practical parameterization and application of some recently introduced data sheet based models of diodes. MOSFETs and IGBT are described
  • Keywords
    arc welding; insulated gate bipolar transistors; invertors; power MOSFET; power semiconductor diodes; power supplies to apparatus; resistance welding; semiconductor device models; welding equipment; IGBT; MOSFET; arc welding; circuit level simulation; data sheet based dynamic semiconductor models; data sheet models; diodes; driving circuits; dynamic semiconductor models; high switching frequency fast dynamic response; inverter welding power sources; load adapted process control; parasitics; power electronic system; resistance welding; simulation; Circuit simulation; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power system modeling; Process control; Process design; Semiconductor diodes; Switching frequency; Welding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the
  • Conference_Location
    Osaka
  • Print_ISBN
    0-7803-7156-9
  • Type

    conf

  • DOI
    10.1109/PCC.2002.998173
  • Filename
    998173