A micron-thickness, planar Schottky diode chip for terahertz applications with theoretical minimum parasitic capacitance

Author

Bishop, W.L. ; Meiburg, E.R. ; Mattauch, R.J. ; Crowe, T.W. ; Poli, L.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

1305

Abstract

The design and fabrication of a novel planar Schottky diode with greatly reduced shunt capacitance for millimeter- and submillimeter-wave applications is described. The dominant pad-to-pad shunt capacitance is minimized by replacing the substrate GaAs with a low-dielectric substitute. This replacement substrate can be easily removed by the user after the device is soldered into the mixer circuit. This will yield the minimum possible pad-to-pad shunt capacitance.<>

Keywords

Schottky-barrier diodes; capacitance; solid-state microwave devices; 1 THz; 1 micron; THF; design; fabrication; low permittivity substrate; micron-thickness; mixer circuit; pad-to-pad shunt capacitance; planar Schottky diode chip; reduced shunt capacitance; replacement substrate; submillimeter wave devices; submillimeter-wave applications; terahertz applications; theoretical minimum parasitic capacitance; Anodes; Conducting materials; Dielectric substrates; Fabrication; Fingers; Gallium arsenide; Laboratories; Parasitic capacitance; Schottky diodes; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99818

Filename

99818