Title :
Growth of GaN single crystals and properties of homoepitaxial MOCVD layers
Author :
Baranowski, J.M. ; Porowski, S.
Author_Institution :
Inst. of Exp. Phys., Warsaw Univ., Poland
fDate :
29 Apr-3 May 1996
Abstract :
Recently high quality GaN plates have been grown from the solution in liquid gallium at N2 pressure up to 20 kbar and temperature close to 1600°C. These single crystals have been used as substrates for homoepitaxial growth of GaN layer by MOCVD. The influence of the polarity of the Ga or N terminated surface of the substrate on the quality of the homoepitaxial layer is discussed. The structural and optical properties of homoepitaxial layers are presented and discussed
Keywords :
III-V semiconductors; crystal structure; gallium compounds; photoluminescence; reflectivity; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1600 C; 20 kbar; GaN; homoepitaxial MOCVD layers; optical properties; polarity; structural properties; Atomic force microscopy; Atomic layer deposition; Crystals; Epitaxial growth; Gallium nitride; MOCVD; Nitrogen; Optical materials; Substrates; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570882
