DocumentCode :
2453703
Title :
SiC’s potential impact on the design of wind generation system
Author :
Zhang, Hui ; Tolbert, Leon M.
Author_Institution :
Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN
fYear :
2008
fDate :
10-13 Nov. 2008
Firstpage :
2231
Lastpage :
2235
Abstract :
The potential impact of SiC devices on a wind generation system is explored by simulations in this work. The system modeling is explained in detail. Most recent SiC MOSFET prototypes are obtained, tested, and used to form a bi-directional converter in the simulation. The performance of the SiC converter is analyzed and compared to its Si counterpart at different temperatures and frequencies. A conclusion is drawn that the SiC converters can improve the wind system efficiency, conserve energy, and reduce system size and cost due to the low-loss, high-frequency, and high-temperature properties of SiC devices even for one-for-one replacement for Si devices.
Keywords :
power MOSFET; power convertors; silicon compounds; wide band gap semiconductors; wind power plants; MOSFET; SiC; energy conservation; silicon carbide converter; wind generation system design; Bidirectional control; Costs; Frequency conversion; MOSFET circuits; Modeling; Performance analysis; Silicon carbide; Temperature; Testing; Virtual prototyping; MOSFET; Silicon carbide (SiC); converter; modeling; wind generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE
Conference_Location :
Orlando, FL
ISSN :
1553-572X
Print_ISBN :
978-1-4244-1767-4
Electronic_ISBN :
1553-572X
Type :
conf
DOI :
10.1109/IECON.2008.4758303
Filename :
4758303
Link To Document :
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