• DocumentCode
    2453703
  • Title

    SiC’s potential impact on the design of wind generation system

  • Author

    Zhang, Hui ; Tolbert, Leon M.

  • Author_Institution
    Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN
  • fYear
    2008
  • fDate
    10-13 Nov. 2008
  • Firstpage
    2231
  • Lastpage
    2235
  • Abstract
    The potential impact of SiC devices on a wind generation system is explored by simulations in this work. The system modeling is explained in detail. Most recent SiC MOSFET prototypes are obtained, tested, and used to form a bi-directional converter in the simulation. The performance of the SiC converter is analyzed and compared to its Si counterpart at different temperatures and frequencies. A conclusion is drawn that the SiC converters can improve the wind system efficiency, conserve energy, and reduce system size and cost due to the low-loss, high-frequency, and high-temperature properties of SiC devices even for one-for-one replacement for Si devices.
  • Keywords
    power MOSFET; power convertors; silicon compounds; wide band gap semiconductors; wind power plants; MOSFET; SiC; energy conservation; silicon carbide converter; wind generation system design; Bidirectional control; Costs; Frequency conversion; MOSFET circuits; Modeling; Performance analysis; Silicon carbide; Temperature; Testing; Virtual prototyping; MOSFET; Silicon carbide (SiC); converter; modeling; wind generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    1553-572X
  • Print_ISBN
    978-1-4244-1767-4
  • Electronic_ISBN
    1553-572X
  • Type

    conf

  • DOI
    10.1109/IECON.2008.4758303
  • Filename
    4758303